Determining voltage offset for a memory operation using memory bin and memory position
AssigneeMicron Technology, Inc.
InventorsMurong Lang, Christina Papagianni, Guang Hu, Lei Lin, Zhenming Zhou
Life of this patent
Estimating the term…
Abstract
Methods, systems, and apparatuses include receiving, by a memory subsystem, a read command from a host device to read data from a memory portion of the memory subsystem. It is determined that the memory portion includes a partial block. A memory bin is determined for the memory portion in response to determining that the memory portion includes the partial block. A position is determined for the memory portion. A voltage offset is applied to a read voltage for the memory portion using the memory bin and the position.
Claims20
A method comprising:
- receiving, by a memory subsystem, a read command from a host device to read data from a memory portion of the memory subsystem;
- determining that the memory portion is included in a partial block;
- determining a memory bin for the memory portion in response to determining that the memory portion is included in the partial block, wherein the memory bin corresponds to an age of data stored in the memory portion;
- determining a position for the memory portion within the partial block;
- and
- applying a voltage offset to a read voltage for the memory portion using the memory bin and the position.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
- receive, by a memory subsystem, a read command from a host device to read data from a memory portion of the memory subsystem;
- determine that the memory portion is included in a partial block;
- determine a memory bin for the memory portion in response to determining that the memory portion is included in the partial block, wherein the memory bin corresponds to an age of data stored in the memory portion;
- determine a position for the memory portion within the partial block;
- and
- apply a voltage offset to a read voltage for the memory portion using the memory bin and the position.
A system comprising:
- a plurality of memory devices;
- and
- a processing device, operatively coupled with the plurality of memory devices, to:
- receive, by a memory subsystem, a read command from a host device to read data from a memory portion of the memory subsystem;
- determine that the memory portion is included in a partial block;
- determine a memory bin for the memory portion in response to determining that the memory portion is included in the partial block, wherein the memory bin corresponds to an age of data stored in the memory portion and a temperature of the memory portion during storage of the data;
- determine a position for the memory portion within the partial block;
- and
- apply a voltage offset to a read voltage for the memory portion using the memory bin and the position.
Dependencies are inferred from the claim text.