Determining grown bad block allowance associated with a memory device
AssigneeMicron Technology, Inc.
InventorsYang Liu, Fanqi Wu, Aaron Lee
Life of this patent
Estimating the term…
Abstract
A processing device determines, during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device. During the pre-runtime stage, a grown bad block allowance is determined based on the first relationship associated with the memory device. The grown bad blocks allowance is stored in a storage location associated with the memory device, where the memory device uses the grown bad blocks allowance during runtime.
Claims20
A method comprising:
- determining, by a processing device during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device;
- determining, during the pre-runtime stage, a grown bad block allowance based on the first relationship associated with the memory device;
- and
- storing the grown bad blocks allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad blocks allowance during runtime operation of the memory device.
A system comprising:
- a memory comprising instructions;
- and
- a processing device, operatively coupled to the memory, to execute the instructions to perform operations comprising:
- determining, during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device;
- determining, during the pre-runtime stage, a grown bad block allowance based on the first relationship associated with the memory device;
- and
- storing the grown bad blocks allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad blocks allowance during runtime operation of the memory device.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining, during a pre-runtime stage associated with a memory device, a first relationship comprising a first modeling of a first parameter of the memory device and a second parameter of the memory device, wherein the first parameter corresponds to a first performance requirement associated with the memory device, and wherein the second parameter corresponds to a second performance requirement associated with the memory device;
- determining, during the pre-runtime stage, a grown bad block allowance based on the first relationship associated with the memory device;
- and
- storing the grown bad blocks allowance in a storage location associated with the memory device, wherein a controller of the memory device accesses the storage location and uses the grown bad blocks allowance during runtime operation of the memory device.
Dependencies are inferred from the claim text.