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US 2026/0035833 A1Published application
Apparatus and method for growth of gallium oxide crystal with an offcut
AssigneeLuxium Solutions, LLC
InventorsDrew T. HAVEN, David B. JOYCE, John M. FRANK
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Abstract
Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane that is rotated from a (001) plane crystallographic orientation. In one embodiment, the rotation is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
Claims20
A Ga2O3 single crystal, comprising:
- a single gallium oxide crystal whose principle plane is rotated from a (001) plane crystallographic orientation, wherein the single crystal has a full width half mass (FWHM) of less than 50 arcsec.
A method of growing a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method, comprising:
- bringing a seed crystal having a (001) crystallographic orientation in contact with a Ga2O3 base melt, wherein a growth face is parallel to the base melt;
- rotate a shaft clockwise or counterclockwise by a degree of rotation, wherein the degree of rotation is greater than 2 degrees and less than 20 degrees;
- pulling the seed crystal to grow the Ga2O3 based single crystal, wherein the Ga2O3 based single crystal has a (001) crystallographic orientation as it is being grown;
- and
- cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40 mm.
2 more elements
Dependencies are inferred from the claim text.