Deposition apparatus

A deposition apparatus comprising:

• a chamber configured to accommodate a target substrate that is configured to discharge a target material, a deposition substrate on which a deposition layer including the target material is formed, and an electrode substrate in contact with the deposition substrate;
• a voltage applying device configured to apply a voltage between the target substrate and the electrode substrate;
• a temperature measurement part configured to measure a temperature of the deposition substrate;
• and
• a controller configured to calculate thermal stress of a first surface of the deposition layer in contact with the deposition substrate and thermal stress of a second surface opposite to the first surface by the temperature of the deposition substrate measured in the temperature measurement part, calculate a thermal stress difference that is a difference between the thermal stress of the first surface and the thermal stress of the second surface, compare an absolute value of the thermal stress difference and a preset threshold thermal stress difference, control operation of the voltage applying device, and perform a deposition process for forming the deposition layer.

A deposition apparatus comprising:

• a chamber configured to accommodate a target substrate that is configured to discharge a target material, a deposition substrate on which a deposition layer including the target material is formed, and an electrode substrate in contact with the deposition substrate;
• a voltage applying device configured to apply a negative DC voltage to the target substrate and a positive DC voltage to the electrode substrate;
• a temperature measurement part configured to measure a temperature of the deposition substrate;
• and
• a controller configured to calculate thermal stress of a first surface of the deposition layer in contact with the deposition substrate and thermal stress of a second surface opposite to the first surface by the temperature of the deposition substrate measured in the temperature measurement part, calculate a thermal stress difference that is a difference between the thermal stress of the first surface and the thermal stress of the second surface, compare an absolute value of the calculated thermal stress difference and a preset threshold thermal stress difference, control operation of the voltage applying device, and perform a deposition process for forming the deposition layer,
• wherein the controller is configured to:
• when the absolute value of the calculated thermal stress difference is greater than the preset threshold thermal stress difference, control that the voltage applying device in an operating state changes to a stop state, or control that the voltage applying device in the stop state maintains the stop state;
• when the absolute value of the calculated thermal stress difference is equal to or less than the preset threshold thermal stress difference, control that the voltage applying device in the stop state changes to the operating state, or control that the voltage applying device in the operating state maintains the operating state;
• and
• perform a plurality of deposition processes and form the deposition layer that has a final target thickness,
• wherein, at a start time point when the absolute value of the calculated thermal stress is equal to the preset threshold thermal stress difference, the voltage applying device is in the stop state, and the controller is configured to control that the voltage applying device in the stop state changes to the operating state, or control that the voltage applying device in the stop state maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until an s-th deposition layer having an s-th thickness is formed while the absolute value of the calculated thermal stress difference is equal to or less than the preset threshold thermal stress difference,
• wherein, after the start time point, at a finish time point when the calculated thermal stress difference is a negative number and the absolute value of the calculated thermal stress difference is equal to the preset threshold thermal stress difference, the voltage applying device is in the stop state, and the controller is configured to control that the voltage applying device in the stop state maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until an f-th deposition layer having an f-th thickness is formed and the deposition layer having the final target thickness is formed while the absolute value of the calculated thermal stress difference is equal to or less than the preset threshold thermal stress difference, and
• wherein the s-th deposition layer and the f-th deposition layer are a portion of the deposition layer, the f-th thickness is greater than the s-th thickness, and the s-th thickness and the f-th thickness are less than the final target thickness.