Manufacturing technique for mechanical debonding of a temporary carrier wafer in a stacked semiconductor system
AssigneeMicron Technology, Inc.
InventorsWei Zhou, Kunal R. Parekh
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Abstract
Methods, systems, and devices for manufacturing technique for mechanical debonding of a carrier wafer from other structures in a stacked semiconductor system are described. The carrier wafer may include a first bonding layer that includes a first plurality of cavities. The stacked semiconductor system may also include a device wafer with a second bonding layer that is fusion bonded with the first bonding layer of the carrier wafer. The second bonding layer of the device wafer may include a second plurality of cavities.
Claims30
A stacked semiconductor system, comprising:
- a carrier wafer with a first bonding layer, the first bonding layer of the carrier wafer comprising a first plurality of cavities;
- and
- a device wafer with a second bonding layer that is fusion bonded with the first bonding layer of the carrier wafer, the second bonding layer of the device wafer comprising a second plurality of cavities.
A method of manufacturing a stacked semiconductor system, comprising:
- forming a first plurality of cavities on a first bonding layer of a carrier wafer;
- forming a second plurality of cavities on a second bonding layer of a device wafer;
- and
- fusion bonding the first bonding layer of the carrier wafer with the second bonding layer of the device wafer after forming the first plurality of cavities on the first bonding layer of the carrier wafer and after forming the second plurality of cavities on the second bonding layer of the device wafer.
A stacked semiconductor system, comprising:
- a device wafer with a first bonding layer;
- and
- a carrier wafer with a second bonding layer, the second bonding layer of the carrier wafer comprising a plurality of cavities that extend from a surface of the first bonding layer of the device wafer to a surface of the carrier wafer.
A method of manufacturing a stacked semiconductor system, comprising:
- forming a plurality of cavities on a first bonding layer of a carrier wafer;
- and
- fusion bonding the first bonding layer of the carrier wafer with a second bonding layer of a device wafer after forming the plurality of cavities on the first bonding layer of the carrier wafer, wherein the plurality of cavities extend from a surface of the carrier wafer to a surface of the second bonding layer of the device wafer.
A stacked semiconductor system prepared by a process comprising steps of:
- forming a first plurality of cavities on a first bonding layer of a carrier wafer;
- forming a second plurality of cavities on a second bonding layer of a device wafer;
- and
- fusion bonding the first bonding layer of the carrier wafer with the second bonding layer of the device wafer after forming the first plurality of cavities on the first bonding layer of the carrier wafer and after forming the second plurality of cavities on the second bonding layer of the device wafer.
Dependencies are inferred from the claim text.