Light-Emitting Transistor and Driving and Preparation Method Therefor, Display Panel, and Display Apparatus

The light-emitting transistor according to claim 18, further comprising:

• a second template layer, disposed between the drain layer and the auxiliary electrode, and located in the light-emitting region, wherein the second template layer includes a plurality of second grooves arranged at intervals, and second dividing portions each located between two adjacent second grooves;
• at least one third conductive strip is located in one of the second grooves, and along a direction perpendicular to the base substrate, a depth of the second groove is greater than a thickness of the third conductive strip;
• wherein the auxiliary electrode further includes a fourth wire grid structure, the fourth wire grid structure includes a plurality of fourth conductive strips arranged at intervals, the plurality of fourth conductive strips are parallel to each other, and the plurality of fourth conductive strips are parallel to the plurality of third conductive strips;
• and at least one fourth conductive strip is located on one of the second dividing portions.

A manufacturing method for a light-emitting transistor, the manufacturing method comprising:

• forming a gate layer and a first insulating layer in sequence on a side of a base substrate;
• forming a source layer on a side of the first insulating layer away from the base substrate, wherein the source layer includes a first wire grid structure, the first wire grid structure includes a plurality of first conductive strips arranged at intervals, and the plurality of first conductive strips are parallel to each other;
• and
• forming a barrier layer on a side of the source layer away from the base substrate, wherein the barrier layer covers surfaces of the first conductive strips of the source layer, and a surface of the barrier layer away from the base substrate is parallel to the base substrate.