Monolithic growth of epitaxial silicon devices via co-doping
AssigneesLawrence Livermore National Security, LLC, The United States of America as represented by the Secretary of the Army, BAE Systems Land & Armaments L.P.
InventorsCaitlin Anne Chapin, Lars F. Voss, Luis M. Hernandez, Mark Rader
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Abstract
In one general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant, where the first type of electrically active dopant of the first layer is one of either a P-type or an N-type and the second type of electrically active dopant of the second layer is the other one of either the P-type or N-type.
Claims20
A process, comprising:
- growing a first layer having a first type of electrically active dopant;
- growing a second layer having a second type of electrically active dopant thereby forming a first diode, wherein the first type of electrically active dopant of the first layer is one of either a P-type or an N-type and the second type of electrically active dopant of the second layer is the other one of either the P-type or N-type;
- and
- repeating the growing steps at least one time for forming at least one additional diode above the first diode.
Dependencies are inferred from the claim text.