Platform mounted coplanar pad architecture
AssigneeCelestial AI Inc.
InventorHua YANG
Life of this patent
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Abstract
A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.
Claims20
An optoelectronic device, comprising:
- a substrate;
- a multi-layered ridge on the substrate, the multi-layered ridge containing an optically active waveguide;
- a slab, located between the multi-layered ridge and the substrate;
- a III-V semiconductor cladding located adjacent to a first and a second sidewalls of the multi-layered ridge and extending from an upper surface of the slab along the first and the second sidewalls;
- and
- a first and a second contact pads positioned on an upper surface of the cladding, the first contact pad being electrically connected to a metal layer on top of the multi-layered ridge and the second contact pad extending through a via in the cladding to electrically connect to the slab.
A method for fabricating an optoelectronic component performed on a multi-layered wafer disposed on a substrate, the method comprising:
- performing one or more etches to the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the multi-layered ridge and being located between the multi-layered ridge and the substrate;
- selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and a second sidewalls of the multi-layered ridge, the cladding extending from the upper surface of the slab along the first and the second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge;
- and
- providing a first and a second contact pads that electrically connect to a layer of the multi-layered ridge and the slab, respectively, including:
- depositing a metal layer on top of the multi-layered ridge and depositing the first contact pad on an upper surface of the cladding such that the first contact pad is in electrical contact with the metal layer;
- and forming a via through the cladding to expose the upper surface of the slab and depositing the second contact pad partially in the via such that the second contact pad is in electrical contact with the slab and partially on the upper surface of the cladding.
An optoelectronic device, comprising:
- a substrate;
- a multi-layered ridge on the substrate, the multi-layered ridge containing an optically active waveguide;
- a slab, located between the multi-layered ridge and the substrate and having a first and a second upper surfaces;
- a III-V semiconductor cladding located adjacent to the first and the second sidewalls of the multi-layered ridge and extending from the first and the second upper surfaces of the slab along the first and the second sidewalls, the III-V semiconductor cladding being epitaxially grown from at least the first and the second upper surfaces of the slab and also grown from exposed portions of the substrate on either side of the slab, such that a step is present between cladding grown from the first and the second upper surfaces of the slab and cladding grown from the substrate;
- and
- a first contact pad on an upper surface of the cladding electrically connected to a metal layer on top of the multi-layered ridge, and a second contact pad on the upper surface of the cladding extending through a via in the cladding to electrically connect to the slab.
Dependencies are inferred from the claim text.