Impedance calibration in a memory sub-system
AssigneeMicron Technology, Inc.
InventorsHarsha Srirangam, Yui Shimizu, Kwangwon Kim
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsHarsha Srirangam, Yui Shimizu, Kwangwon Kim
Estimating the term…
Control logic in a memory device initiates an impedance (ZQ) calibration to be performed by a calibration circuit coupled to an output buffer of an input/output circuit the I/O circuit of the memory device. A first set of calibration units of the calibration circuit includes a first calibration unit and a second calibration unit, where a first calibration code including a first sequence of bit values is generated having at least one bit value of the first sequence generated by a first transistor set of the first calibration unit and a second transistor set of the second calibration unit. The first calibration code is provided to one or more pull-up units of the output buffer, where the first calibration code is used to calibrate a first impedance of the one or more pull-up units. A second calibration code including a second sequence of bit values is generated by a second set of calibration units and a third set of calibration units. The second calibration code is provided to one or more pull-down units of the output buffer to calibrate a second impedance of the one or more pull-down units.
A memory device comprising:
A memory device comprising:
A method comprising:
Dependencies are inferred from the claim text.