Memory system, operation method thereof, memory controller and storage medium

A memory controller coupled to at least one memory device, the memory device includes a plurality of word lines, wherein each word line is coupled to a plurality of memory cells, and a plurality of memory cells coupled to a same word line form at least one physical page;

• the memory controller includes an interface, a buffer, and a control circuit, wherein
• the control circuit is configured to:
• according to data fed back by the memory device, obtain a first parameter of a first physical page of a plurality of physical pages, wherein the first parameter is a parameter in a preset model for generating a target reference voltage, and the target reference voltage is used as a read voltage of the physical page when performing a read operation, and wherein the plurality of physical pages includes the first physical page and a second physical page, the first physical page is a target physical page of a read scrub operation in the plurality of physical pages, and the second physical page is another physical page other than the first physical page of the plurality of physical pages;
• generate a first parameter of the second physical page according to the first parameter of the first physical page in combination with a location relationship between the second physical page and the first physical page;
• and
• store, by the buffer, the first parameter of the first physical page and the first parameter of the second physical page.

An operation method of a memory system, the operation method includes:

• when performing a read scrub operation, obtaining a first parameter of a first physical page of a plurality of physical pages, wherein the first parameter is a parameter in a preset model for generating a target reference voltage, and the target reference voltage is used as a read voltage of the physical page when performing a read operation, and wherein the memory system includes at least one memory device, and the memory device includes a plurality of word lines, wherein each word line is coupled to a plurality of memory cells, and the plurality of memory cells coupled to a same word line form at least one physical page, wherein the plurality of physical pages include the first physical page and a second physical page, the first physical page is at least one physical page performing the read scrub operation, and the second physical page is another physical page other than the first physical page of the plurality of physical pages;
• generating the first parameter of the second physical page according to the first parameter of the first physical page in combination with a location relationship between the second physical page and the first physical page;
• and
• storing the first parameter of the first physical page and the first parameter of the second physical page.