Read error handling operations with shorter sensing time
AssigneeMicron Technology, Inc.
InventorsYu-Chung Lien, Zhenming Zhou
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsYu-Chung Lien, Zhenming Zhou
Estimating the term…
Methods, systems, and devices for read error handling (REH) operations with shorter sensing time are described. For example, a memory system may use a shorter sensing duration (e.g., relative to nominal read operations outside an REH procedure) for performing read operations in the REH procedure, which may reduce BEC and shorten the read duration to increase read performance. Shorter sensing durations may inherently upshift the voltage threshold distribution of memory cells, increasing their reliability and decreasing an associated bit error count. The shorter sensing durations may be used for any read operation performed in the REH procedure. In some cases, the memory system may enter a REH procedure for a block family (e.g., for a sequential read operation). In such cases, the memory system may read the remaining blocks in the block family using the shorter sensing duration after exiting the REH procedure.
A memory system, comprising:
A method by a memory system, comprising:
A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more processors to:
Dependencies are inferred from the claim text.