Display panel and display device
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorsRunfa ZONG, Yang YU, Qiang HE, Ruqing ZHANG
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Abstract
The present application provides display panel and a display device. The display panel includes a substrate, a buffer layer, a thin film transistor layer and an reflection-enhancing film group, where the reflection-enhancing film group includes one or more reflection-enhancing films, each reflection-enhancing film includes at least two reflection-enhancing layers, and a refractive index of a first reflection-enhancing layers away from the substrate is greater than a refractive index of a second reflection-enhancing layer close to the substrate.
Claims20
A display panel, comprising:
- a substrate;
- a buffer layer located above the substrate;
- a thin film transistor layer located on one side of the buffer layer away from the substrate, wherein the thin film transistor layer includes an active layer;
- a reflection-enhancing film group located on one side of the buffer layer away from the active layer, wherein an orthographic projection of the reflection-enhancing film group on the substrate overlaps an orthographic projection of the active layer on the substrate, the reflection-enhancing film group includes one or more reflection-enhancing films, each reflection-enhancing film includes at least two reflection-enhancing layers, and a refractive index of a first reflection-enhancing layers away from the substrate is greater than a refractive index of a second reflection-enhancing layers close to the substrate;
- wherein, a thickness of each reflection-enhancing layer and a wavelength of incident light satisfy the following equation:
- 2
-
- n
- 1
-
- h
- 1
- +
- λ
- /
- 2
- =
- k
-
- λ
- where h1 is the thickness of the reflection-enhancing layer, n1 is a refractive index of a corresponding dielectric layer of the reflection-enhancing layer, k is a positive integer, and λ represents the wavelength of the incident light.
A display panel, comprising:
- a substrate;
- a buffer layer located above the substrate;
- a thin film transistor layer located on one side of the buffer layer away from the substrate, wherein the thin film transistor layer includes an active layer;
- a reflection-enhancing film group located on one side of the buffer layer away from the active layer, wherein an orthographic projection of the reflection-enhancing film group on the substrate overlaps an orthographic projection of the active layer on the substrate, the reflection-enhancing film group includes one or more reflection-enhancing films, each reflection-enhancing film includes at least two reflection-enhancing layers, and a refractive index of a first reflection-enhancing layers away from the substrate is greater than a refractive index of a second reflection-enhancing layers close to the substrate;
- wherein, a thickness of each reflection-enhancing layer and a wavelength of incident light satisfy the following equation:
- 2
-
- n
- 1
-
- h
- 1
- +
- λ
- /
- 2
- =
- k
-
- λ
- where h1 is the thickness of the reflection-enhancing layer, n1 is a refractive index of a corresponding dielectric layer of the reflection-enhancing layer, k is a positive integer, and λ represents the wavelength of the incident light.
Dependencies are inferred from the claim text.