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US 2026/0028313 A1Published application
Onium salt, chemically amplified resist composition, and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorMasahiro Fukushima
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Abstract
Provided are an onium salt, a chemically amplified resist composition comprising the onium salt, and a pattern forming process using the chemically amplified resist composition, the chemically amplified resist composition exhibiting a high sensitivity, high resolution, improved lithography properties including EL, LWR, CDU and DOF, and resist pattern collapse resistance, when processed by photolithography using high-energy radiation independent of whether it is of positive or negative tone. An onium salt has the formula (1):
Claims19
An onium salt having the formula (1):
- wherein n1 is 0 or 1, n2 is 1, 2, or 3, n3 is 0, 1, or 2, provided that 1≤n2+n3≤4 when n1 is 0, and 1≤n2+n3≤6 when n1 is 1,
- R1 is a halogen atom, a nitro group, a cyano group, a pentafluorosulfanyl group, a C1-C20 hydrocarbyl group which may contain a heteroatom, a C1-C20 hydrocarbyloxy group which may contain a heteroatom, or a C1-C20 hydrocarbylthio group which may contain a heteroatom, when n3 is 2, two R1 may be identical or different, and two R1 may bond together to form a ring with the carbon atoms to which they are attached,
- RAL is a hydrogen atom or an acid labile group,
- LA is an oxygen atom when RAL is a hydrogen atom, and is an ether bond, an ester bond, or a carbonate bond when RAL is an acid labile group, and
- Z+ is each independently an onium cation.
2 more elements
Dependencies are inferred from the claim text.