Method of making a doped material and associated photonic device
OwnerRaman KASHYAP, Thomas MEYNENG +3inventors
InventorsRaman KASHYAP, Thomas MEYNENG, Jyothis THOMAS, Younes MESSADDEQ, Nicolas GREGOIRE
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Abstract
There is provided a photonics device including: a doped material including an oxide host hosting a system of ytterbium oxide and network modifiers, containing above 0.5×1026 ions/m3 of ytterbium; a laser pump directed to the doped material; and the lifetime of an excited state of the ytterbium in response to the laser pump is of above 0.9 ms and a phonon energy of the host material is above 1000 cm−1.
Claims20
A photonics device comprising:
- a doped material including an oxide host hosting a system of ytterbium oxide and network modifiers, containing an ion density of more than 0.5×1026 ions per m−3 of ytterbium;
- a laser pump directed to the doped material;
- wherein the lifetime of an excited state of the ytterbium in response to the laser pump is of above 0.9 ms, and a phonon energy of the host material is higher than 1000 cm−1.
A method of making a doped material, the method comprising, using a modified chemical vapor deposition (MCVD) technique:
- providing a solution doped preform containing ytterbium in the form of ytterbium chloride or ytterbium fluoride and a non-fluorescent lanthanide chloride or fluoride,
- drying the solution doped preform, vitrifying and collapsing the solution doped preform into a collapsed preform,
- heat treating the collapsed preform to control the amplitude of phase-separated state of ytterbium-rich lanthanide oxide forming a colloidal solution with an oxide host.
Dependencies are inferred from the claim text.