M/tio2 catalysts and methods of use

Abstract

The present disclosure provides for methods for designing and constructing metal/semiconductor heterostructures as catalysts for a wide range of applications such as oxygen activation. In a particular aspect, the present disclosure provides for the manipulation of atomic structures at M/TiO2 interface (e.g., Au/TiO2 interface) that significantly alters the interfacial electron distribution and prompts O2 activation. In an aspect, the present disclosure provides for a M/TiO2 composites (e.g., heterostructures) having a defect-free M/TiO2 interface and method of making the M/TiO2 composites having a defect-free M/TiO2 interface. The M can be Au, Ag, Cu, Al, Pt, Ni, or Pd, for example.

Dependencies are inferred from the claim text.