Solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorToshiaki ONO
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Abstract
A solid-state imaging device according to an embodiment of the present disclosure includes a stacked photoelectric converter for each of a plurality of pixels. The stacked photoelectric converter has a plurality of photoelectric conversion elements stacked therein. The plurality of photoelectric conversion elements each has different wavelength selectivity. This solid-state imaging device further includes a plurality of data output lines from which pixel signals based on electric charges outputted from the photoelectric conversion elements are outputted. A plurality of data output lines is provided for each predetermined unit pixel column. The plurality of the data output lines is equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter.
Claims6
A light detecting device, comprising:
- a stacked photoelectric converter for each of a plurality of pixels, the stacked photoelectric converter having a plurality of photoelectric conversion elements stacked therein, the plurality of photoelectric conversion elements each having different wavelength selectivity;
- and
- a plurality of data output lines from which pixel signals are outputted, the pixel signals being based on electric charges outputted from the photoelectric conversion elements, wherein
- a plurality of the data output lines is provided for each predetermined unit pixel column, the plurality of the data output lines being equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter, and
- the light detecting device further comprises a column processing circuit for each of the data output lines.
Dependencies are inferred from the claim text.