Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYohei YUDA, Tatsuro WATAHIKI
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Abstract
A leakage current is suppressed. A semiconductor device includes: a first anode electrode formed in a part of an upper surface of a gallium oxide layer of a first conductivity type; a semiconductor layer of a second conductivity type to cover a part of the gallium oxide layer and at least a part of the first anode electrode; and a second anode electrode to cover the semiconductor layer, wherein a plurality of trenches is formed in a surface layer of the gallium oxide layer, the first anode electrode is formed in the surface layer of the gallium oxide layer, the first anode electrode not overlapping the trenches in a plan view, and the semiconductor layer covers the gallium oxide layer in an inner portion of the trenches.
Claims13
A semiconductor device, comprising:
- a gallium oxide layer of a first conductivity type;
- a first anode electrode formed in a part of an upper surface of the gallium oxide layer;
- a semiconductor layer of a second conductivity type to cover a part of the gallium oxide layer and at least a part of the first anode electrode;
- and
- a second anode electrode to cover the semiconductor layer,
- wherein a plurality of trenches is formed in a surface layer of the gallium oxide layer,
- the first anode electrode is formed in the surface layer of the gallium oxide layer, the first anode electrode not overlapping the trenches in a plan view, and
- the semiconductor layer covers the gallium oxide layer in an inner portion of the trenches.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first anode electrode in a part of an upper surface of a gallium oxide layer of a first conductivity type;
- etching a surface layer of the gallium oxide layer using the first anode electrode as a mask to form a plurality of trenches;
- forming a semiconductor layer of a second conductivity type to cover a part of the gallium oxide layer including an inner portion of the trenches, and at least a part of the first anode electrode;
- and
- forming a second anode electrode to cover the semiconductor layer.
Dependencies are inferred from the claim text.