Selective etch of titanium carbide materials using oxidation
AssigneeTokyo Electron Limited
InventorsWenyi Xie, Ivo Otto, IV, Kandabara Tapily, Matthew Flaugh, Subhadeep Kal
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AssigneeTokyo Electron Limited
InventorsWenyi Xie, Ivo Otto, IV, Kandabara Tapily, Matthew Flaugh, Subhadeep Kal
Estimating the term…
A method of dry etching a titanium carbide material of a substrate includes performing an oxidation step and a fluorination step. The oxidation step includes exposing the titanium carbide material to an oxidizing agent to form an oxidized layer including titanium oxide species and remove carbon from the titanium carbide material by forming volatilized carbon oxide species. The fluorination step includes exposing the titanium oxide species of the oxidized layer to a fluorinating agent to remove titanium from the titanium carbide material by forming volatilized fluorinated titanium oxide species. The method may be repeated as a cycle in situ within a processing chamber. The method may further include a substitution step that includes exposing a metallic fluoride species formed during the fluorination step to a substitution agent to remove metallic species from the titanium carbide material by forming volatilized metallic fluoride species.
A method of dry etching a titanium carbide material of a substrate, the method comprising performing a cycle in situ within a processing chamber, the cycle comprising:
A method of dry etching a titanium carbide material comprising titanium, carbon, and a metallic species, the method being performed in situ within a processing chamber and comprising:
A dry etching system comprising:
Dependencies are inferred from the claim text.