High quality quantum computer components
AssigneeApplied Materials, Inc.
InventorsZihao Yang, Mingwei Zhu, Lan Yu, Zhebo Chen, Robert Jan Visser, Nag Patibandla
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Abstract
Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.
Claims20
A device component structure comprising:
- a silicon substrate;
- and
- a first patterned aluminum layer positioned on the silicon substrate, wherein a first interface between the first patterned aluminum layer and the silicon substrate is oxygen free.
A device component structure comprising:
- a silicon substrate;
- a first patterned aluminum layer positioned on the silicon substrate;
- an aluminum oxide layer positioned on at least a portion of the first patterned aluminum layer;
- and
- a second patterned aluminum layer positioned on the aluminum oxide layer and a portion of the silicon substrate.
A device component structure comprising:
- a silicon substrate;
- a first patterned metal layer positioned on the silicon substrate, wherein a first interface between the first patterned metal layer and the silicon substrate is oxygen free;
- a metal oxide layer positioned on at least a portion of the first patterned metal layer;
- and
- a second patterned metal layer positioned on the metal oxide layer and a portion of the silicon substrate, wherein a second interface between the second patterned metal layer and the silicon substrate is oxygen free.
Dependencies are inferred from the claim text.