Led with surface shaped luminance
AssigneeLumileds LLC
InventorFlorent Gregoire Monestier
Life of this patent
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Abstract
Discussed herein are devices. systems, and method for controlled luminance in a light emitting diode (LED). A lighting apparatus includes a p-doped semiconductor material. an n-doped semiconductor material, first and second dielectric materials, a bonding layer situated between the first and second dielectric materials, the bonding layer including a high sheet resistance such that it is configured to have ohmic losses, and electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material.
Claims20
A lighting apparatus comprising:
- a p-doped semiconductor material;
- an n-doped semiconductor material;
- first and second dielectric materials;
- a bonding layer situated between the first and second dielectric materials, the bonding layer including a high sheet resistance such that it is configured to have high ohmic losses;
- and
- electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material.
A lighting apparatus comprising:
- a p-doped semiconductor material;
- an n-doped semiconductor material;
- first, second, and third dielectric materials;
- a first bonding layer situated between the first and second dielectric materials, a thickness of the first bonding layer extending from the first dielectric material to the second dielectric material and configured to have ohmic losses;
- a second bonding layer situated between the second dielectric material and the third dielectric material, a thickness of the second bonding layer extending from the second bonding material to the third bonding material and configured to have ohmic losses;
- and
- electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively.
A method of making a lighting apparatus, the method comprising:
- situating a semiconductor material including n-doped and p-doped portions on a substrate;
- situating a first dielectric material on the semiconductor material;
- situating a first bonding layer on the first dielectric material;
- situating a second dielectric material on the first bonding layer, a thickness of the first bonding layer extending from the first dielectric material to the second dielectric material and configured to have ohmic losses;
- and
- forming electrical contacts electrically connected to the n-doped semiconductor material and the p-doped semiconductor material, respectively.
Dependencies are inferred from the claim text.