Display panel for processing biometrics using tft photodetectors integrated thereon
OwnerHoon KIMinventor
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Abstract
A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.
Claims15
A display panel comprising:
- an amorphous transparent substrate;
- a display pixel configured to irradiate light;
- an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector comprising:
- an active layer formed of amorphous silicon or polycrystalline silicon on the amorphous transparent substrate,
- a source formed of amorphous silicon or polycrystalline silicon on the amorphous transparent substrate,
- a drain formed of amorphous silicon or polycrystalline silicon, opposite to the source on the amorphous transparent substrate,
- an insulating oxide film formed on the source, the drain, and the active layer, and
- a light receiver formed on the insulating oxide film, configured to absorb light, and insulated from the active layer by the insulating oxide film;
- wherein the TFT photodetector is configured to collect light reflected from a body located on the amorphous transparent substrate;
- and
- a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.
A method of fabricating a display panel for biometric processing, the method comprising:
- forming a P-type polycrystalline silicon or amorphous silicon diffusion layer on an amorphous transparent substrate;
- forming two P+-type diffusion layers of amorphous silicon or polycrystalline silicon at both sides of the P-type diffusion layer;
- forming a thin SiO2 or SiNx insulating oxide film on the diffusion layers;
- forming an N-type diffusion layer of polycrystalline silicon or amorphous silicon on the insulating oxide film;
- photo-patterning the N-type diffusion layer to form a gate configured to serve as a light receiver;
- etching the insulating oxide film to remain only necessary parts by a photoresist patterning process, wherein partial insulating oxide films are removed on areas to be used as a source and a drain;
- and
- removing remaining areas except for the areas to be used as the source and the drain from the P+-type diffusion layers by etching;
- and
- depositing a metal to form electrodes in the areas where the insulating oxide films have been removed for the source and the drain.
Dependencies are inferred from the claim text.