Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJongyong Son, Suehye Park, Juyoun Kim, Hyung Jong Lee
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Abstract
A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern comprising semiconductor patterns, which are vertically stacked and are spaced apart from each other in a vertical direction, a source/drain pattern connected to the channel pattern, an inner gate electrode interposed between adjacent ones of the semiconductor patterns, an outer gate electrode on an uppermost one of the semiconductor patterns, a gate spacer on a side surface of the outer gate electrode, and a gate capping pattern on a top surface of the outer gate electrode. The gate capping pattern is in contact with a top surface of the gate spacer.
Claims20
A semiconductor device comprising:
- a substrate including an active pattern;
- a channel pattern on the active pattern, the channel pattern comprising a plurality of semiconductor patterns, which are vertically stacked and are spaced apart from each other in a vertical direction;
- a source/drain pattern connected to the channel pattern;
- an inner gate electrode interposed between adjacent ones of the plurality of semiconductor patterns;
- an outer gate electrode on an uppermost one of the plurality of semiconductor patterns;
- a gate spacer on a side surface of the outer gate electrode;
- and
- a gate capping pattern on a top surface of the outer gate electrode,
- wherein the gate capping pattern is in contact with a top surface of the gate spacer.
A semiconductor device comprising:
- a substrate including an active pattern;
- a channel pattern on the active pattern, the channel pattern comprising a plurality of semiconductor patterns, which are vertically stacked and are spaced apart from each other in a vertical direction;
- a source/drain pattern connected to the channel pattern;
- an inner gate electrode interposed between adjacent ones of the plurality of semiconductor patterns;
- an outer gate electrode on an uppermost one of the plurality of semiconductor patterns;
- a silicon nitride layer on side surfaces and a top surface of the outer gate electrode;
- a silicon oxide layer covering the source/drain pattern;
- and
- an active contact that penetrates the silicon oxide layer and is connected to the source/drain pattern,
- wherein a side surface of the active contact is in contact with the silicon oxide layer and is spaced apart from the silicon nitride layer.
A semiconductor device comprising:
- a substrate including an active pattern;
- a channel pattern on the active pattern, the channel pattern comprising a plurality of semiconductor patterns, which are vertically stacked and are spaced apart from each other in a vertical direction;
- a source/drain pattern connected to the channel pattern;
- an inner gate electrode interposed between adjacent ones of the plurality of semiconductor patterns;
- an outer gate electrode on an uppermost one of the plurality of semiconductor patterns;
- a gate spacer on a side surface of the outer gate electrode;
- a gate capping pattern on a top surface of the outer gate electrode;
- a first interlayer insulating layer covering the source/drain pattern;
- a second interlayer insulating layer on the first interlayer insulating layer;
- and
- an active contact that penetrates the first interlayer insulating layer, the second interlayer insulating layer, and an upper portion of the source/drain pattern,
- wherein the gate capping pattern is spaced apart from the active contact in a first direction,
- wherein the active contact comprises:
- a first portion that penetrates the first interlayer insulating layer and the second interlayer insulating layer;
- and
- a second portion that penetrates the upper portion of the source/drain pattern,
- wherein the first portion has a first width in the first direction, and
- a distance between the gate capping pattern and the active contact in the first direction is equal to or greater than half the first width.
Dependencies are inferred from the claim text.