Semiconductor device and method for manufacturing semiconductor device

A semiconductor device including a transistor portion and a diode portion, the semiconductor device comprising:

• a drift region of a first conductivity type which is provided in a semiconductor substrate;
• a plurality of trench portions which extend in a predetermined trench extension direction, on a front surface side of the semiconductor substrate, wherein
• the transistor portion has
• a base region of a second conductivity type which is provided above the drift region,
• a plurality of emitter regions of the first conductivity type which are discretely provided in a trench extension direction, and each of which has a higher doping concentration than the drift region,
• a contact region of the second conductivity type which has a higher doping concentration than the base region,
• a trench contact portion which is provided to extend from a front surface of the semiconductor substrate in a depth direction of the semiconductor substrate, in a mesa portion between two adjacent trench portions, among the plurality of trench portions, and
• a thinning region which is provided between two adjacent emitter regions in the trench extension direction, among the plurality of emitter regions, and which has a lower doping concentration of the second conductivity type than the contact region.