US 2026/0020291 A1 · SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

Abstract

A semiconductor structure includes a substrate, a support structure located above the substrate and capacitor holes spaced apart, wherein the capacitor holes penetrate through the support structure, and lower electrodes located in the capacitor holes, wherein each lower electrode includes a first lower electrode layer, a second lower electrode layer, and a third lower electrode layer. The first lower electrode layer covers the bottom and the side walls of one of the capacitor holes, the second lower electrode layer is conformal to the first lower electrode layer and forms a cavity, and the third lower electrode layer is filled in the cavity, wherein the work function of the second lower electrode layer is greater than the work function of the first lower electrode layer and is greater than the work function of the third lower electrode layer.

Claims15

Dependent claims

A semiconductor structure,

comprising:
a substrate;
a support structure located above the substrate and capacitor holes spaced apart, wherein the capacitor holes penetrate through the support structure;
and
lower electrodes located in the capacitor holes, wherein each lower electrode comprises a first lower electrode layer, a second lower electrode layer, and a third lower electrode layer, wherein the first lower electrode layer covers a bottom and side walls of one of the capacitor holes, the second lower electrode layer is conformal to the first lower electrode layer and forms a cavity, and the third lower electrode layer is filled in the cavity, wherein a work function of the second lower electrode layer is greater than a work function of the first lower electrode layer and is greater than a work function of the third lower electrode layer.

2 more elements

A method for manufacturing a semiconductor structure,

comprising:
providing a substrate;
forming a laminated structure on the substrate;
etching the laminated structure to form capacitor holes;
forming a first lower electrode layer, a second lower electrode layer, and a third lower electrode layer in each capacitor hole, wherein the first lower electrode layer, the second lower electrode layer, and the third lower electrode layer constitute a lower electrode, wherein the first lower electrode layer covers a bottom and side walls of the capacitor hole, the second lower electrode layer is conformal to the first lower electrode layer and forms a cavity, and the third lower electrode layer is filled in the cavity, wherein a work function of the second lower electrode layer is greater than a work function of the first lower electrode layer and is greater than a work function of the third lower electrode layer.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and method for manufacturing semiconductor structure

Life of this patent

Semiconductor structure and method for manufacturing semiconductor structure

Life of this patent

Abstract

Claims15