Semiconductor device and method for manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorMotoyoshi KUBOUCHI
Life of this patent
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Abstract
Provided is a method for manufacturing a semiconductor device, including forming a plurality of trenches at a front surface of a semiconductor substrate, forming an implantation mask in a first trench of the plurality of trenches, and implanting a dopant of a second conductivity type in a second trench, among the plurality of trenches, in which the implantation mask is not formed, to form a trench bottom portion in a bottom portion of the second trench, wherein in the implanting the dopant, the dopant of the second conductivity type is also implanted in a first mesa portion adjacent to the first trench and a second mesa portion adjacent to the second trench.
Claims17
A method for manufacturing a semiconductor device, comprising:
- forming a plurality of trenches at a front surface of a semiconductor substrate;
- forming an implantation mask in a first trench of the plurality of trenches;
- and
- implanting a dopant of a second conductivity type in a second trench, among the plurality of trenches, in which the implantation mask is not formed, to form a trench bottom portion in a bottom portion of the second trench, wherein
- in the implanting the dopant, the dopant of the second conductivity type is also implanted in a first mesa portion adjacent to the first trench and a second mesa portion adjacent to the second trench.
A method for manufacturing a semiconductor device, comprising:
- forming a trench etch mask at a front surface of a semiconductor substrate;
- forming a plurality of trenches at the front surface of the semiconductor substrate by using the trench etch mask;
- forming an implantation mask in a first trench of the plurality of trenches;
- and
- implanting a dopant of a second conductivity type in a second trench in which the implantation mask is not formed, to form a trench bottom portion in a bottom portion of the second trench by using the trench etch mask and the implantation mask.
A semiconductor device, comprising:
- a plurality of trench portions including a first trench portion and a second trench portion;
- and
- a trench bottom portion of a second conductivity type provided in a bottom portion of the second trench portion, wherein
- the first trench portion in which the trench bottom portion is not provided is a dummy trench portion or a dummy gate trench portion.
Dependencies are inferred from the claim text.