Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChien-Yi LEE, Chun-Liang CHENG, Chih-Hsien HUANG, Yi-Chin LI, Sheng-Huei DAI
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a resistor and a capacitor is provided. The capacitor includes a top electrode and a bottom electrode. The semiconductor device further includes a substrate, a first well, at least two doped regions, at least one gate and at least one oxide layer. The substrate serves as the bottom electrode of the capacitor. The first well is disposed in the substrate. The doped regions are disposed in the first well and are connected to the ground. The gate is disposed in the substrate and serves as the resistor and the top electrode of the capacitor. The oxide layer is disposed between the gate and the substrate.
Claims10
A semiconductor device, comprising a resistor and a capacitor, wherein the capacitor comprises a top electrode and a bottom electrode, and the semiconductor device further comprises:
- a substrate, wherein the substrate serves as the bottom electrode of the capacitor;
- a first well disposed in the substrate;
- at least two doped regions disposed in the first well, wherein the at least two doped regions are connected to ground;
- at least one gate disposed on the substrate, wherein the gate serves as the resistor and the top electrode of the capacitor;
- and
- at least one oxide layer disposed between the gate and the substrate.
Dependencies are inferred from the claim text.