Three-dimensional semiconductor device

A three-dimensional semiconductor device, comprising:

• a semiconductor pattern extending in a first direction parallel to a bottom surface of a substrate;
• a word line surrounding a portion of the semiconductor pattern and extending in a second direction, which is parallel to the bottom surface of the substrate and is orthogonal to the first direction;
• a bit line on a first side surface of the semiconductor pattern and extending in a third direction perpendicular to the bottom surface of the substrate;
• a metal silicide pattern on a second side surface of the semiconductor pattern opposite to the first side surface;
• and
• a first electrode enclosing the metal silicide pattern,
• wherein the metal silicide pattern comprises a first metal element and silicon, and
• wherein the first electrode comprises the first metal element and oxygen.

A three-dimensional semiconductor device, comprising:

• a first stack and a second stack, which are on a substrate and are adjacent to each other in a first direction parallel to a bottom surface of the substrate;
• and
• a data storage pattern between the first stack and the second stack,
• wherein the first stack comprises:
• a first semiconductor pattern spaced apart from the substrate and extending in the first direction;
• a first word line surrounding a portion of the first semiconductor pattern and extending in a second direction, which is parallel to the bottom surface of the substrate and is orthogonal to the first direction;
• a first bit line provided on a first side surface of the first semiconductor pattern and extending in a third direction perpendicular to the bottom surface of the substrate;
• and
• a metal silicide pattern on a second side surface of the first semiconductor pattern,
• wherein the data storage pattern comprises:
• a first electrode enclosing the metal silicide pattern;
• a second electrode on the first electrode;
• a dielectric layer between the first electrode and the second electrode;
• and
• a plate electrode in contact with the second electrode,
• wherein the first electrode comprises a metal oxide material.