Non-volatile memory device including on-die termination circuit
AssigneeSamsung Electronics Co., Ltd.
InventorsSeunghyeon YUN, Hyunsuk KANG, Kyoungtae KANG, Jindo BYUN, Youngdon CHOI
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AssigneeSamsung Electronics Co., Ltd.
InventorsSeunghyeon YUN, Hyunsuk KANG, Kyoungtae KANG, Jindo BYUN, Youngdon CHOI
Estimating the term…
Provided is a non-volatile memory device including an input/output (I/O) pin configured to transfer data to or receive data from a memory controller, and a plurality of memory dies connected to the I/O pin, the plurality of memory dies including a target die, a first non-target die, and a second non-target die, wherein the first non-target die includes a first on-die-termination (ODT) circuit connected to the I/O pin and provides a first ODT resistance value based on a first distance between the target die and the first non-target die, and wherein the second non-target die includes a second ODT circuit connected to the I/O pin and provides a second ODT resistance value based on a second distance between the target die and the second non-target die, the second ODT resistance value being different from the first ODT resistance value.
A non-volatile memory device comprising:
A storage device comprising:
A non-volatile memory device comprising:
Dependencies are inferred from the claim text.