Semiconductor Device and Method of Stacking Hybrid Substrates with Embedded Electric Components

A semiconductor device, comprising:

• a first redistribution layer (RDL) substrate;
• a plurality of first conductive pillars formed over a first surface of the first RDL substrate;
• a first electrical component disposed over the first surface of the first RDL substrate;
• a hybrid substrate bonded to the first conductive pillars;
• and
• an encapsulant deposited around the hybrid substrate and first RDL substrate.

A method of making a semiconductor device, comprising:

• providing a first redistribution layer (RDL) substrate;
• forming a plurality of first conductive pillars over a first surface of the first RDL substrate;
• disposing a first electrical component over the first surface of the first RDL substrate;
• providing a hybrid substrate bonded to the first conductive pillars, wherein providing the hybrid substrate includes,
• (a) providing a core substrate,
• (b) forming a first RDL over a first surface of the core substrate, and
• (c) forming a second RDL over a second surface of the core substrate opposite the first surface of the core substrate;
• depositing an encapsulant around the hybrid substrate and first RDL substrate.

A method of making a semiconductor device, comprising:

• providing a first redistribution layer (RDL) substrate;
• forming a plurality of first conductive pillars over a first surface of the first RDL substrate;
• disposing a first electrical component over the first surface of the first RDL substrate;
• providing a hybrid substrate bonded to the first conductive pillars;
• and
• depositing an encapsulant around the hybrid substrate and first RDL substrate.