Chip Metallization Method and Chip
AssigneeHuawei Technologies Co., Ltd.
InventorsYi Liu, Jie Liu, Jifeng Zhu
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Abstract
A chip includes a chip substrate having a first thickness and including a back surface. The back surface includes an etched portion with an etching depth that is less than the first thickness. The chip further includes a first thin film including a dielectric material and located on the back surface. The chip further includes a second thin film including a barrier layer material and located on the first thin film. The chip further includes a third thin film including a metal material, embedded in the chip substrate, and located on the second thin film. The chip further includes a coverage layer including nitride or carbon nitride and located on the first thin film, the second thin film, and the third thin film.
Claims20
A chip, comprising:
- a chip substrate having a first thickness and comprising a back surface, wherein the back surface comprises an etched portion with an etching depth that is less than the first thickness;
- a first thin film comprising a dielectric material and located on the back surface;
- a second thin film comprising a barrier layer material and located on the first thin film;
- a third thin film comprising a metal material, embedded in the chip substrate, and located on the second thin film;
- and
- a coverage layer comprising nitride or carbon nitride and located on the first thin film, the second thin film, and the third thin film.
A method, comprising:
- etching a back surface of a chip substrate to an etching depth, wherein the etching depth is less than a first thickness of the chip substrate;
- depositing a first thin film on the back surface, wherein the first thin film comprises a dielectric material;
- depositing a second thin film on the first thin film, wherein the second thin film comprises a barrier layer material;
- depositing a third thin film on the second thin film, wherein the third thin film comprises a metal material;
- embedding the third film in the chip substrate;
- and
- depositing a coverage layer comprising nitride or carbon nitride on the first thin film, the second thin film, and the third thin film.
An electronic device, comprising:
- a circuit comprising a chip, wherein the chip comprises:
- a chip substrate having a first thickness and comprising a back surface, wherein the back surface comprises an etched portion with an etching depth that is less than the first thickness, and wherein a pattern of the etched portion forms a circuit for controlling the electronic device;
- a first thin film comprising a dielectric material and located on the back surface;
- a second thin film comprising a barrier layer material and located on the first thin film;
- a third thin film comprising a metal material, embedded in the chip substrate, and located on the second thin film;
- and
- a coverage layer comprising nitride or carbon nitride and located on the first thin film, the second thin film, and the third thin film.
Dependencies are inferred from the claim text.