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US 2026/0018518 A1Published application
Backside trench isolation for high voltage device integration
AssigneeInternational Business Machines Corporation
InventorsGopal Sankar Kenath, Tao Li, Ruilong Xie, Robert Gauthier
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Abstract
A semiconductor device includes a backside contact, a shallow trench isolation (STI), and a backside dielectric trench isolation (BDTI) below the STI. A top surface of the BDTI is connected to the STI on a backside of a high voltage region of the semiconductor device, a bottom surface of the BDTI is connected to a backside power interconnect, and the BDTI isolates a backside contact from a substrate.
Claims20
A semiconductor device, comprising:
- a backside contact;
- a shallow trench isolation (STI);
- and
- a backside dielectric trench isolation (BDTI) below the STI, wherein:
- a top surface of the BDTI is connected to the STI on a backside of a high voltage region of the semiconductor device,
- a bottom surface of the BDTI is connected to a backside power interconnect, and
- the BDTI isolates a backside contact from a substrate.
4 more elements
A method for fabrication of a semiconductor device, the method comprising:
- forming a backside contact;
- forming a shallow trench isolation (STI);
- forming a backside dielectric trench isolation (BDTI) below the STI;
- establishing a connection between a top surface of the BDTI and the STI on a backside of
- a high voltage region of the semiconductor device;
- establishing a connection between a bottom surface of the BDTI and a backside power interconnect;
- and
- isolating a backside contact from a substrate by the BDTI.
5 more elements
A semiconductor device, comprising:
- a shallow trench isolation (STI);
- and
- a backside dielectric trench isolation (BDTI) below the STI, wherein:
- a top surface of the BDTI is connected to the STI on a backside of a high voltage region of the semiconductor device,
- a bottom surface of the BDTI is connected to a backside power interconnect, and
- the high voltage region is a fin field-effect transistor (FET), a planar device, or a nanosheet transistor.
3 more elements
Dependencies are inferred from the claim text.