Semiconductor device with heat dissipation layer and method of fabricating thereof

A method comprising:

• forming a transistor device;
• forming a multi-layer interconnect (MLI) connected to the transistor device, wherein the forming the MLI includes forming an uppermost metal layer;
• depositing a diamond-like carbon layer over the uppermost metal layer, wherein the diamond-like carbon layer has an upper surface having an RMS of at least a hundred nanometers;
• depositing a bonding layer on the diamond-like carbon layer;
• forming a via extending through the diamond-like carbon layer and the bonding layer to the uppermost metal layer;
• and
• forming a conductive feature of at least one of a ball or a bump on the via.

A method of semiconductor device fabrication, comprising:

• forming an active device;
• forming a multi-layer interconnect (MLI) connected to the active device;
• depositing a diamond-like carbon layer over the MLI, wherein the diamond-like carbon layer has an uppermost surface having a first RMS of at least a hundred nanometers;
• planarizing the uppermost surface having the first RMS to form another uppermost surface having a second RMS that is about 10 to 50 percent less than the first RMS;
• after the planarizing, depositing a bonding layer over the diamond-like carbon layer;
• and
• providing a conductive feature extending through the diamond-like carbon layer and the deposited bonding layer.