Post treatment processes

A method, comprising:

• exposing a substrate in a processing chamber to a deposition precursor having a structure of Formula (I) to form a first film on the substrate, wherein Formula (I) is represented by:
• wherein:
• Q1 is a carbon atom or an oxygen atom;
• and
• each of R1, R2, R3, R4, R5, R6, R7, and R8 is independently selected from a hydrogen atom, a substituted alkyl, an unsubstituted alkyl, a substituted alkoxy, an unsubstituted alkoxy, a substituted vinyl, an unsubstituted vinyl, a silane, a substituted amine, an unsubstituted amine, or a halide;
• exposing the first film to a reactive precursor comprising diatomic oxygen or ozone to form an second film;
• and
• exposing the second film to a UV light source to form a third film.

A method, comprising:

• exposing a substrate in a processing chamber to a deposition precursor having a structure of Formula (I) to form a first film on the substrate, the first film having a first dielectric constant, a first leakage current, a first breakdown voltage, and a first hardness, wherein Formula (I) is represented by:
• wherein:
• Q1 is a carbon atom or an oxygen atom;
• and
• each of R1, R2, R3, R4, R5, R6, R7, and R8 is independently selected from a hydrogen atom, a substituted alkyl, an unsubstituted alkyl, a substituted alkoxy, an unsubstituted alkoxy, a substituted vinyl, an unsubstituted vinyl, a silane, a substituted amine, an unsubstituted amine, or a halide;
• exposing the first film to a reactive precursor to form an second film, wherein exposing the first film comprises:
• introducing the reactive precursor to the processing chamber at a flow rate of about 500 standard cubic centimeters per minute (sccm) to about 2,000 sccm;
• introducing a carrier gas into the processing chamber at a flow rate of about 10,000 sccm to about 17,000 sccm;
• and
• maintaining a pressure of about 10 Torr to about 15 Torr and a temperature of about 5° C. to about 400° C.;
• and
• exposing the second film to a UV light source to form a third film.