Film forming method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsHiroki MURAKAMI, Shuichiro SAKAI
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Abstract
A film forming method of forming an oxide film, which contains at least a predetermined element and oxygen, on a substrate, includes: (a) supplying a first raw material gas, which contains the predetermined element, to the substrate; (b) supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, to the substrate; and (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).
Claims12
A film forming method of forming an oxide film, which contains at least a predetermined element and oxygen, on a substrate, comprising:
- (a) supplying a first raw material gas, which contains the predetermined element, to the substrate;
- (b) supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, to the substrate;
- and
- (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).
A substrate processing apparatus comprising:
- a processing container;
- a substrate support that supports a substrate within the processing container;
- a first raw material gas supply that supplies a first raw material gas containing a predetermined element into the processing container;
- a second raw material gas supply that supplies a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, into the processing container;
- and
- a controller configured to be capable of performing a process including:
- (a) supplying the first raw material gas, which contains the predetermined element, to the substrate;
- (b) supplying the second raw material gas, which contains the predetermined element, contains the bond between the predetermined element and oxygen and the bond between the predetermined element and the hydroxyl group, and is different from the first raw material gas, to the substrate;
- and
- (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).
Dependencies are inferred from the claim text.