Field emitter and method for manufacturing same

A method for manufacturing a field emitter, comprising:

• sequentially forming a primary epitaxial layer and an aluminum oxide layer which are laminated on a substrate;
• patterning the aluminum oxide layer to form a plurality of via holes;
• forming a plurality of secondary epitaxial structures on the primary epitaxial layer exposed by the via hole;
• forming an emitter electrode layer and a dielectric layer between the emitter electrode layer and the plurality of secondary epitaxial structures on the primary epitaxial layer;
• sequentially forming an insulating layer, a gate electrode layer and a planarization layer which are laminated on the dielectric layer, the plurality of secondary epitaxial structures and the remaining aluminum oxide layer;
• etching the planarization layer to expose part of the gate electrode layer on the dielectric layer and part of the secondary epitaxial structure;
• etching and removing the insulating layer and the exposed part of the gate electrode layer on part of the secondary epitaxial structure so as to expose part of the secondary epitaxial structure;
• forming a gate connection electrode layer on the exposed gate electrode layer on the dielectric layer;
• and
• forming an anode opposite to the exposed part of the secondary epitaxial structure, the anode and the exposed part of the secondary epitaxial structure having a predetermined distance from each other.