Memory, a memory system, and a method for operating memory

A memory device, comprising:

• a memory cell array comprising a first group of memory cells and a second group of memory cells, wherein the first group comprises a first memory cell and a second memory cell, and the second group comprises a third memory cell and a fourth memory cell;
• a first word line coupled to the first group of memory cells and a second word line coupled to the second group of memory cells, wherein the second word line is adjacent to the first word line;
• and
• a peripheral circuit coupled to the first word line and the second word line and configured to:
• perform a second read operation on a second group of memory cells coupled to a second word line, comprising:
• perform a first sensing operation on a first memory cell of the second group of memory cells based on a first develop time;
• and
• perform a second sensing operation on a second memory cell of the second group of memory cells based on a second develop time different from the first develop time,
• wherein a threshold voltage of the third memory cell adjacent to the first memory cell is greater than a threshold voltage of the fourth memory cell adjacent to the second memory cell;
• and
• the first develop time is greater than the second develop time.

A memory system, comprising:

• a memory device;
• and
• a memory controller coupled to the memory device and configured to control the memory device;
• wherein the memory device comprises:
• a memory cell array comprising a first group of memory cells and a second group of memory cells, wherein the first group comprises a first memory cell and a second memory cell, and the second group comprises a third memory cell and a fourth memory cell;
• a first word line coupled to the first group of memory cells and a second word line coupled to the second group of memory cells, wherein the second word line is adjacent to the first word line;
• and
• a peripheral circuit coupled to the first word line and the second word line and configured to:
• perform a second read operation on a second group of memory cells coupled to a second word line, comprising:
• perform a first sensing operation on a first memory cell of the second group of memory cells based on a first develop time;
• and
• perform a second sensing operation on a second memory cell of the second group of memory cells based on a second develop time different from the first develop time,
• wherein a threshold voltage of the third memory cell adjacent to the first memory cell is greater than a threshold voltage of the fourth memory cell adjacent to the second memory cell;
• and
• the first develop time is greater than the second develop time.