Method and device for photodetector circuit with near infrared compliant substrate

A sensor device comprising:

• a silicon substrate comprising a backside region and a frontside region, wherein the silicon substrate comprises a plurality of v-grooves formed within the frontside region;
• a first buffer region overlying the plurality of v-grooves;
• a defect filter layer (DFL) region overlying the first buffer region;
• a second buffer region overlying the DFL region, wherein the first and second buffer regions comprise relaxed buffer regions;
• a wavelength configuring material overlying the second buffer region, the wavelength configuring material comprising a graded region;
• and wherein the plurality of material regions includes an interface region between each adjacent pair of the material regions;
• an n-type contact region overlying the wavelength configuring material;
• an absorber region overlying the n-type contact region;
• a p-type spacer region overlying the absorber region;
• and
• a p-type contact region overlying the p-type spacer region.

A sensor device comprising:

• a first terminal;
• a second terminal;
• a silicon substrate comprising a backside region and a frontside region, wherein the silicon substrate comprises a plurality of v-grooves formed within the frontside region;
• a first compound semiconductor (CS) buffer region overlying the plurality of v-grooves;
• a defect filter layer (DFL) region overlying the first buffer region;
• a second CS buffer region overlying the DFL region;
• an array of photomultiplier (PM) devices overlying the second CS buffer region, the array being characterized by N and M pixel elements, each of the PM devices comprising
• an n-type contact region overlying the second CS buffer region;
• an absorber region overlying the n-type contact region;
• a p-type spacer region overlying the absorber region;
• a p-type contact region overlying the p-type spacer region;
• wherein the n-type contact region, the absorber region, the p-type spacer region, and the p-type contact region form a single photon avalanche detector (SPAD) device;
• a quenching resistor coupled to the SPAD device;
• a first electrode coupled to the n-type contact material and the first terminal;
• and
• a second electrode coupled to the p-type contact material and the second terminal.