Photosensitive organic insulating material composition, insulating film, gate insulating film, transistor, electronic device, and method for manufacturing transistor
AssigneeNikon Corporation
InventorsKentaro YAMADA, Yusuke KAWAKAMI, Shohei KOIZUMI
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Abstract
An objective of the present invention is to provide a photosensitive organic insulating composition having sufficient absorption, even of i-line radiation, as a photosensitive organic insulating composition that has little influence on device reliability and that is capable of forming a gate insulating film for transistors. An objective of the present invention is also to provide a gate insulating film and a transistor. A photosensitive organic insulating composition according to one embodiment of the present invention contains a chalcone compound and polyvinyl cinnamate.
Claims12
A photosensitive organic insulating material composition comprising:
- a chalcone compound;
- and
- polyvinyl cinnamate.
A method for manufacturing a gate insulating film, comprising:
- a step of applying the photosensitive organic insulating material composition onto a substrate, the photosensitive organic insulating material composition comprising a chalcone compound and polyvinyl cinnamate;
- and
- a step of curing the photosensitive organic insulating material composition by exposure to form a gate insulating film.
Dependencies are inferred from the claim text.