Radiation sensing device
AssigneeTower Semiconductor Ltd.
InventorsRuth Shima-Edelstein, Yakov Roizin
Life of this patent
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Abstract
A radiation sensing device, that includes a sensing region that includes a radiation sensor, and an exterior region that includes a first guard element, a field limiting region, an array of surface holes and one or more sub-surface inner spaces. The exterior region is configured to prevent breakdown of the radiation sensing device at a presence of a surface charge created due to the radiation. The array of surface holes and the sub-surface inner spaces are located between the first guard element and the field limiting region and are configured to reduce the capacitance pf the exterior region.
Claims20
A radiation sensing device, comprising:
- a sensing region that comprises a radiation sensor located at a surface of the radiation sensing device and is configured to sense radiation of a one or more specified wavelengths;
- and
- an exterior region that comprises a first guard element, a field limiting region, an array of surface holes and one or more sub-surface inner spaces;
- wherein the exterior region is located outside the sensing region and is configured to prevent breakdown of the radiation sensing device at a presence of a surface charge created due to the radiation;
- wherein the first guard element surrounds the sensing region and is configured to collect leakage current from the exterior region of the radiation sensing device;
- wherein the field limiting region surrounds the first guard element;
- and
- wherein the array of surface holes reaches one or more sub-surface inner spaces;
- and
- wherein the array of surface holes and the sub-surface inner spaces are located between the first guard element and the field limiting region.
A method for sensing radiation, the method comprises:
- biasing a radiation sensor within a sensing region of a radiation sensing device;
- sensing, by the radiation sensor, radiation of a one or more specified wavelengths;
- preventing, by an exterior region, a breakdown of the radiation sensing device at a presence of a surface charge created due to the radiation;
- wherein the exterior region is located outside the sensing region and comprises a first guard element, a field limiting region, an array of surface holes and one or more sub-surface inner spaces;
- wherein the preventing comprises collecting, by the first guard element leakage current from the exterior region.
A method for manufacturing a radiation sensing device, the method comprises:
- forming a sensing region that comprises a radiation sensor located at a surface of the radiation sensing device and is configured to sense radiation of a one or more specified wavelengths;
- and
- forming an exterior region that comprises a first guard element, a field limiting region, an array of surface holes and one or more sub-surface inner spaces;
- wherein the exterior region is located outside the sensing region and is configured to prevent breakdown of the radiation sensing device at a presence of a surface charge created due to the radiation;
- wherein the first guard element surrounds the sensing region and is configured to collect leakage current from the exterior region of the radiation sensing device;
- wherein the field limiting region surrounds the first guard element;
- wherein the array of surface holes reaches one or more sub-surface inner spaces;
- and wherein the array of surface holes and the sub-surface inner spaces are located between the first guard element and the field limiting region.
Dependencies are inferred from the claim text.