Build up bonding layer process and structure for low temperature copper bonding
OwnerGaius Gillman Fountain, JR.inventor
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Abstract
Disclosed herein are methods of forming a microelectronic component. In some embodiments, the method includes providing an element having a metallization layer that comprises a field dielectric and a conductive feature embedded in the field dielectric. The metallization layer also comprises a surface that includes the field dielectric and the conductive feature. The method further includes forming a copper feature over the conductive feature, forming a dielectric layer over sidewalls of the copper feature, and then planarizing the dielectric layer to form a hybrid bonding surface, where the copper feature is exposed at the hybrid bonding surface.
Claims55
A method of forming a microelectronic component, the method comprising:
- providing an element having a metallization layer that comprises a field dielectric and a conductive feature embedded in the field dielectric;
- forming a copper feature over the conductive feature;
- after forming the copper feature, forming a dielectric layer over sidewalls of the copper feature;
- and
- planarizing the dielectric layer to form a hybrid bonding surface, wherein the copper feature is exposed at the hybrid bonding surface.
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A method of forming a bonded structure, the method comprising:
- providing a first element having a metallization layer that comprises a dielectric layer and a plurality of conductive features embedded in the dielectric layer;
- forming a bonding layer over the surface of the metallization layer, wherein the bonding layer comprises a dielectric material and a plurality of copper features, wherein at least one of the plurality of copper features is electrically connected to one of the plurality of conductive features, wherein the dielectric material and the plurality of copper features form a first hybrid bonding surface of the bonding layer, and the dielectric material comprises an oxide material that directly contacts sidewalls of each of the plurality of copper features;
- preparing the first hybrid bonding surface for hybrid bonding;
- providing a second element having a second hybrid bonding surface;
- and
- hybrid bonding the first hybrid bonding surface to the second hybrid bonding surface.
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A microelectronic component, comprising:
- an element having a metallization layer including a first dielectric layer and a conductive feature embedded in the first dielectric layer;
- and
- a bonding layer formed over the metallization layer, wherein the bonding layer comprises:
- a second dielectric layer;
- and
- a copper feature, wherein the copper feature is electrically connected to the conductive feature, wherein the second dielectric layer directly contacts sidewalls of the copper feature, and wherein the second dielectric layer and the copper feature form a hybrid bonding surface of the bonding layer.
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Dependencies are inferred from the claim text.