Redundant bond pads in stacked semiconductor architectures

A method of manufacturing a semiconductor device, comprising:

• forming a first die comprising a first via and comprising two or more first functional conductive pads at a surface of the first die, the first via coupled with first circuitry of the first die;
• forming a first redistribution layer in the first die, wherein the two or more first functional conductive pads are coupled with the first via based at least in part on the first redistribution layer;
• forming a second die comprising a second via and comprising two or more second functional conductive pads at a surface of the second die, the second via coupled with second circuitry of the second die;
• forming a second redistribution layer in the second die, wherein the two or more second functional conductive pads are coupled with the second via based at least in part on the second redistribution layer;
• and
• bonding the first die with the second die based at least in part on the two or more first functional conductive pads and the two or more second functional conductive pads.

A semiconductor device, comprising:

• a first die comprising:
• a first via;
• a first redundant via;
• first circuitry coupled with the first via and the first redundant via;
• and
• a plurality of first conductive pads at a surface of the first die wherein the first via and the first redundant via are coupled with respective first conductive pads of the plurality of first conductive pads;
• and
• a second die comprising:
• a second via;
• a second redundant via;
• second circuitry coupled with the second via and the second redundant via;
• and
• a plurality of second conductive pads at a surface of the second die, wherein the second via and the second redundant via is coupled with respective second conductive pads of the plurality of second conductive pads.

A method of manufacturing a semiconductor device, comprising:

• forming a first die comprising a first via and a first redundant via, the first via and the first redundant via coupled with first circuitry of the first die;
• forming a plurality of first conductive pads at a surface of the first die, wherein the first via and the first redundant via are coupled with respective first conductive pads of the plurality of first conductive pads;
• forming a second die comprising a second via and a second redundant via, the second via and the second redundant via coupled with second circuitry of the second die;
• forming a plurality of second conductive pads at a surface of the second die, wherein the second via and the second redundant via is coupled with respective second conductive pads of the plurality of second conductive pads;
• and
• bonding the first die with the second die based at least in part on the plurality of first conductive pads and the plurality of second conductive pads.