Semiconductor device having air gap structure and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a plurality of spaced-apart conductive interconnects on a surface of a conductive interconnect structure disposed on a substrate;
• selectively forming a plurality of functionalized polymers on the surface of the conductive interconnect structure, each of the plurality of the functionalized polymers including a carbon-based polymer chain and a functional group that is bonded to the surface of the conductive interconnect structure, the functional group including a thiol group, an epoxy group, an amino group, a carboxyl group, or a silane-based group;
• forming a first dielectric layer to cover the plurality of the spaced-apart conductive interconnects and the plurality of the functionalized polymers;
• and
• removing the carbon-based polymer chain of each of the plurality of the functionalized polymers so as to form a plurality of air gap structures, such that two adjacent ones of the plurality of the spaced-apart conductive interconnects are spaced apart from each other by a corresponding one of the plurality of the air gap structures.

A method for manufacturing a semiconductor device, comprising:

• forming a nanoparticle dispersion layer over a conductive interconnect structure disposed on a substrate, the nanoparticle dispersion layer including a first dielectric layer and a plurality of nanoparticles dispersed in the first dielectric layer, the first dielectric layer including a first dielectric material;
• patterning the nanoparticle dispersion layer to form a plurality of trenches in the nanoparticle dispersion layer;
• and
• removing the nanoparticles to form a plurality of air gap structures, two adjacent ones of the plurality of the air gap structures being spaced apart from each other by a corresponding one of the plurality of the trenches, each of the plurality of the air gap structures including a dielectric portion and a plurality of nanopores which are distributed in the dielectric portion and which are spatially communicated with each other.