Component for semiconductor manufacturing apparatus, and manufacturing method therefor
AssigneeTokai Carbon Korea Co., Ltd
InventorKi Won KIM
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Abstract
The present invention relates to a component for a semiconductor manufacturing apparatus, and a heat-resistant material, and the component for a semiconductor manufacturing apparatus, according to the present invention, has a level difference with a plurality of layers on a cross-section thereof, wherein the plurality of layers includes a first surface exposed to plasma and a second surface loaded on the semiconductor manufacturing apparatus.
Claims20
A component for a semiconductor manufacturing apparatus, the component comprising:
- a step between a plurality of layers on a cross section of the component, wherein the plurality of layers comprises a first surface exposed to a plasma and a second surface seated on the semiconductor manufacturing apparatus.
A method of manufacturing a component for a semiconductor manufacturing apparatus, the method comprising:
- a step of preparing a base material;
- a step of forming a deposition layer comprising silicon carbide (SiC) or boron carbide (B4C) to surround the base material;
- a step of processing the deposition layer;
- and
- a step of obtaining a component for a semiconductor manufacturing apparatus by removing the base material, the component comprising at least one SiC or B4C.
Dependencies are inferred from the claim text.