Etching method, etching apparatus, and recording medium

An etching apparatus comprising:

• a gas supply source configured to supply each of a first etching gas and a second etching gas that includes at least one selected from the group of an ammonia gas and an amine gas;
• a gas flow path to which the first etching gas and the second etching gas are supplied from the gas supply source;
• a processing container in which a substrate, on which a first film is formed, is accommodated and to which a downstream end of the gas flow path is connected;
• a reservoir provided in the gas flow path;
• and
• a valve provided downstream of the reservoir in the gas flow path, the valve being closed to store the first etching gas and the second etching gas in the reservoir and increase an internal pressure of the reservoir, and then being opened to supply the first etching gas and the second etching gas into the processing container to etch the first film.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, an etching apparatus to perform:

• supplying each of a first etching gas and a second etching gas that includes at least one selected from the group of an ammonia gas and an amine gas from a gas supply source to a gas supply path;
• storing the first etching gas and the second etching gas in a reservoir provided in the gas supply path to increase an internal pressure of the reservoir;
• and
• supplying the first etching gas and the second etching gas, stored in the reservoir, to a processing container in which a substrate is accommodated by opening a valve provided downstream of the reservoir in the gas supply path, thus etching a first film formed on the substrate.