Redistribution interposer for package and method of forming same

A method comprising:

• exposing a first pattern in a first pattern region of a first photoresist layer, wherein the first pattern has a first linewidth;
• exposing a second pattern in a second pattern region of the first photoresist layer, wherein the second pattern has a second linewidth that is smaller than the first linewidth, wherein the first pattern region laterally surrounds the second pattern region;
• performing a first developing process on the first pattern region and the second pattern region of the first photoresist layer to form a pattern in the first photoresist layer;
• and
• depositing a conductive material in the pattern of the first photoresist layer.

A package comprising:

• a redistribution interposer comprising a plurality of redistribution layers in a plurality of dielectric layers, wherein each redistribution layer of the plurality of redistribution layers has a first region with a first pitch that surrounds a second region with a second pitch, wherein the second pitch is smaller than the first pitch, wherein the first region is adjacent each sidewall of the redistribution interposer;
• a semiconductor die bonded to a first side of the redistribution interposer;
• and
• a package substrate bonded to a second side of the redistribution interposer.