Reduced underlayer oxidation during gap fill

A semiconductor processing method comprising:

• performing a first atomic layer deposition (ALD) process on a substrate disposed within a processing region of a semiconductor processing chamber, wherein a layer of a silicon-containing material defining one or more features is disposed on the substrate, and wherein the first ALD process deposits a silicon-and-nitrogen-containing material on the silicon-containing material;
• halting the first ALD process;
• performing a second ALD process on the substrate, wherein the second ALD process deposits a silicon-and-oxygen-containing material in the one or more features.

A semiconductor processing method comprising:

• performing a first atomic layer deposition (ALD) process on a substrate disposed within a processing region of a semiconductor processing chamber, wherein alternating layers of a silicon-containing material and a silicon-and-germanium-containing material defining one or more features is disposed on the substrate, and wherein the first ALD process conformally deposits a silicon-and-nitrogen-containing liner material on the alternating layers of the silicon-containing material and the silicon-and-germanium-containing material;
• halting the first ALD process after the silicon-and-nitrogen-containing liner material is formed to a thickness of greater than or about 2 nm;
• performing a second ALD process on the substrate, wherein the second ALD process deposits a silicon-and-oxygen-containing material in the one or more features.