Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

A processing apparatus comprising:

• a first supply system configured to supply an inert gas from a first supplier to the substrate;
• a second supply system configured to supply a first processing gas from a second supplier to the substrate;
• a third supply system that is configured to supply an inert gas from a third supplier to the substrate;
• a fourth supply system that is configured to supply a second processing gas from a fourth supplier to the substrate;
• and
• a controller configured to be capable of controlling an operation of the processing apparatus so as to perform a process including:
• (a) providing a substrate;
• and
• (b) forming a film on the substrate by alternately performing:
• (b-1) supplying the inert gas from the first supplier, supplying the first processing gas from the second supplier, supplying the inert gas from the third supplier, and
• (b-2) supplying the second processing gas from the fourth supplier to the substrate,
• wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and
• wherein in (b), a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a processing apparatus to perform a process comprising:

• (a) providing a substrate;
• and
• (b) forming a film on the substrate by alternately performing:
• (b-1) supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier, and
• (b-2) supplying a second processing gas from a fourth supplier to the substrate,
• wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and
• wherein in (b), a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.