Method for manufacturing metal fluoride-containing organic polymer film, patterning method, and method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsNorikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA, Ryosuke YAMAMOTO
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Abstract
A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.
Claims18
1-17. (canceled)
A method for manufacturing a metal fluoride-containing organic polymer film comprising:
- exposing an organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound;
- and
- exposing the organic polymer film infiltrated with the organometallic compound to a hydrogen fluoride gas, thereby providing a fluoride of the first metal in the organic polymer film.
A patterning method comprising:
- forming a pattern on an organic polymer film formed on a film;
- exposing the organic polymer film having the pattern to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound;
- and
- exposing the organic polymer film infiltrated with the organometallic compound to a hydrogen fluoride gas.
A method for manufacturing a semiconductor device comprising:
- forming an organic polymer film on a semiconductor substrate having a film;
- etching the organic polymer film to form a pattern;
- exposing the organic polymer film having the pattern to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound;
- exposing the organic polymer film infiltrated with the organometallic compound to a hydrogen fluoride gas;
- and
- etching the film using the organic polymer film that is exposed to the hydrogen fluoride gas.
Dependencies are inferred from the claim text.