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US 2026/0010075 A1Published application
Resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShun Kikuchi, Masaki Ohashi, Satoshi Kusama, Kousuke Ohyama
Life of this patent
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Abstract
The resist composition contains a polymer containing a repeat unit having a hypervalent iodine structure having the formula (1), a carboxy group-containing compound, and a solvent. The non-chemically amplified resist composition is excellent in sensitivity and maximum resolution in photolithography using high-energy radiation, such as electron beam (EB) lithography and EUV lithography.
Claims6
A resist composition comprising a polymer containing a repeat unit having a hypervalent iodine structure having the formula (1), a carboxy group-containing compound, and a solvent:
- wherein m is 0 or 1, n is 0, 1, 2, 3, or 4 when m is 0, and is 0, 1, 2, 3, 4, 5, or 6 when m is 1,
- RA is a hydrogen atom, halogen atom, methyl group, or trifluoromethyl group,
- R1 and R2 are each independently a halogen atom or a C1-C10 hydrocarbyl group which may contain a heteroatom, and R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms, and
- R3 is a halogen atom or a C1-C20 hydrocarbyl group which may contain a heteroatom.
1 more element
Dependencies are inferred from the claim text.