Junction barrier schottky diode

Abstract

Disclosed herein is a junction barrier Schottky diode that includes: a semiconductor substrate; a drift layer provided on the semiconductor substrate; a field insulating film covering an annular outer peripheral area of an upper surface of the drift layer; an anode electrode brought into Schottky-contact with a center area of the upper surface of the drift layer that is surrounded by the outer peripheral area, an end portion of the anode electrode being positioned on the field insulating film; a cathode electrode brough into ohmic contact with the semiconductor substrate; a p-type semiconductor layer embedded in a first trench formed in the center area of the drift layer so as to be connected to the anode electrode and the drift layer; and a conductive member contacting the field insulating film and electrically connected to the semiconductor substrate.

Dependencies are inferred from the claim text.